Search results for "static test"
showing 10 items of 15 documents
A Methodology for the Analysis of Memory Response to Radiation through Bitmap Superposition and Slicing
2015
A methodology is proposed for the statistical analysis of memory radiation test data, with the aim of identifying trends in the single-even upset (SEU) distribution. The treated case study is a 65nm SRAM irradiated with neutrons, protons and heavy-ions.
Soft errors in commercial off-the-shelf static random access memories
2016
International audience; This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on static random access memory (SRAM). We detailed irradiation test techniques and results from irradiation experiments with several types of particles. Two commercial SRAMs, in 90 and 65 nm technology nodes, were considered as case studies. Besides the basic static and dynamic test modes, advanced stimuli for the irradiation tests were introduced, as well as statistical post-processing techniques allowing for deeper analysis of the correlations between bit-flip cross-sections and design/architectural characteristics of the memory device. Further insight is provided on the …
Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
2016
International audience; The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.
Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions
2015
The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.
Damage Identification of Beams Using Static Test Data
2003
A damage identification procedure for beams under static loads is presented. Damage is modelled through a damage distribution function which determines a variation of the beam stiffness with respect to a reference condition. Using the concept of the equivalent superimposed deformation, the equations governing the static problem are recast in a Fredholm’s integral equation of the second kind in terms of bending moments. The solution of this equation is obtained through an iterative procedure as well as in closed form. The latter is explicitly dependent from the damage parameters, thus, it can be conveniently used to set-up a damage identification procedure. Some numerical results are present…
Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory
2018
International audience; This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.
Methodologies for the Statistical Analysis of Memory Response to Radiation
2016
International audience; Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.
Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs
2015
International audience; Various failure scenarios may occur during irradiation testing of SRAMs, which may generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them.
The Hu-Washizu variational principle for the identification of imperfections in beams
2008
This paper presents a procedure for the identification of imperfections of structural parameters based on displacement measurements by static tests. The proposed procedure is based on the well-known Hu–Washizu variational principle, suitably modified to account for the response measurements, which is able to provide closed-form solutions to some inverse problems for the identification of structural parameter imperfections in beams. Copyright © 2008 John Wiley & Sons, Ltd.
Study of the thermo-mechanical performances of the IFMIF-EVEDA Lithium Test Loop target assembly
2012
Abstract Within the framework of the IFMIF R&D program and in close cooperation with ENEA-Brasimone, at the Department of Energy of the University of Palermo a research campaign has been launched to investigate the thermo-mechanical behavior of the target assembly under both steady state and start-up transient conditions. A theoretical approach based on the finite element method (FEM) has been followed and a well-known commercial code has been adopted. A realistic 3D FEM model of the target assembly has been set-up and optimized by running a mesh independency analysis. A proper set of loads and boundary conditions, mainly concerned with radiation heat transfer between the target assembly ex…